for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t hmc636st89 / 636ST89E gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz v02.0311 general description features functional diagram the h m c636 s t89( e ) is a gaas ph em t, high l inearity, l ow n oise, w ideband gain block amplifer covering 0.2 to 4.0 ghz. p ackaged in an industry standard so t89, the amplifer can be used as either a cascadable 50 o hm gain stage, a p a p re-driver, a l ow n oise amplifer, or a gain block with up to +23 dbm output power. this versatile gain block amplifer is powered from a single +5v supply and requires no external matching components the internally matched topology makes this amplifer compatible with virtually any p cb material or thickness. l ow n oise f igure: 2.2 db high p 1db o utput p ower: +22 dbm high o utput ip 3: +40 dbm gain: 13 db 50 o hm i / o s - n o e xternal m atching i ndustry s tandard so t89 p ackage typical applications the h m c636 s t89( e ) is ideal for: ? cellular / pcs / 3g ? wimax, wibro, & fixed wireless ? catv & cable modem ? microwave radio electrical specifcations, vs= 5.0 v, t a = +25 c p arameter m in typ. m ax m in. typ. m ax. units f requency r ange 0.2 - 2.0 2.0 - 4.0 ghz gain 10 13 5 10 db gain variation o ver temperature 0.01 0.02 0.01 0.02 db/ c i nput r eturn l oss 10 10 db o utput r eturn l oss 13 15 db r everse i solation 22 20 db o utput p ower for 1 db compression ( p 1db) 19 22 20 23 dbm o utput third o rder i ntercept ( ip 3) 36 39 36 39 dbm n oise f igure 2.5 2 db s upply current ( i cq) 155 155 175 ma n ote: data taken with broadband bias tee on device output.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 output r eturn loss vs. temperature broadband gain & r eturn loss gain vs. temperature r everse i solation vs. temperature i nput r eturn loss vs. temperature n oise figure vs. temperature hmc636st89 / 636ST89E v02.0311 gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz -20 -15 -10 -5 0 5 10 15 20 0 1 2 3 4 5 6 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 0 1 2 3 4 +25c +85c -40c gain (db) frequency (ghz) -20 -15 -10 -5 0 0 1 2 3 4 +25c +85c -40c return loss (db) frequency (ghz) -20 -15 -10 -5 0 0 1 2 3 4 +25c +85c -40c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 1 2 3 4 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 +25c +85c -40c noise figure (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t p ower compression @ 2200 mhz p 1db vs. temperature p sat vs. temperature output ip 3 vs. i nput tone p ower p ower compression @ 850 mhz gain, p ower, output ip 3 & supply current vs. supply voltage @ 850 mhz hmc636st89 / 636ST89E v02.0311 gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz 0 5 10 15 20 25 30 0 1 2 3 4 +25c +85c -40c p1db (dbm) frequency (ghz) 0 5 10 15 20 25 30 0 1 2 3 4 +25c +85c -40c psat (dbm) frequency (ghz) -8 -4 0 4 8 12 16 20 24 28 -20 -16 -12 -8 -4 0 4 8 12 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -8 -4 0 4 8 12 16 20 24 28 32 -20 -16 -12 -8 -4 0 4 8 12 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 20 25 30 35 40 45 0 1 2 3 4 0 dbm + 5 dbm +10 dbm ip3 (dbm) frequency (ghz) 10 20 30 40 50 0 20 40 60 80 100 120 140 160 4.5 4.75 5 5.25 5.5 is gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) is (ma) vs (vdc)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 outline drawing absolute maximum r atings collector bias voltage (vcc) +5.5 volts rf i nput p ower ( rfin )(vcc = +5 vdc) +16 dbm channel temperature 150 c continuous p diss (t = 85 c) (derate 13.3 m w /c above 85 c) 0.86 w thermal r esistance (channel to lead) 75.6 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) class 1a p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c636 s t89 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] h636 xxxx h m c636 s t89 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h636 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx p ackage i nformation ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions hmc636st89 / 636ST89E v02.0311 gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz no tes: 1. p ackag e bo dy m aterial : molding compound mp -180 s or e qui valen t. 2. lead m aterial : cu w/ ag spo t pl ating. 3. lead pl atin g: 100% m atte tin. 4. d imensions are in inches [millimet ers] 5. d imension does no t include moldfla sh of 0.15mm per side. 6. d imension does no t include moldfla sh of 0.25mm per side. 7. a ll g round leads mus t be soldere d t o pcb rf g roun d.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t application circuit p in descriptions p in n umber f unction description i nterface s chematic 1 rfin this pin is dc coupled. an off-chip dc blocking capacitor is required. 3 rfo ut rf o utput and dc b i a s for the amplifer. s ee application circuit for off-chip components. 2, 4 g n d these pins and package bottom must be connected to rf /dc ground. hmc636st89 / 636ST89E v02.0311 gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 evaluation p cb the circuit board used in the fnal application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation p cb 119394 [1] i tem description j1 - j2 p cb m ount sm a connector j3 - j4 dc p in c1 - c3 100 p f capacitor, 0402 p kg. c4 1000 p f capacitor, 0603 p kg. c5 2.2 f capacitor, tantalum l 1 47 nh i nductor, 0603 p kg. u1 h m c636 s t89( e ) p cb [2] 119392 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: fr 4 hmc636st89 / 636ST89E v02.0311 gaas phemt hi gh lin ea ri t y gain block, 0.2 - 4.0 ghz
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